unisonic technologies co., ltd 12n70 power mosfet www.unisonic.com.tw 1 of 7 copyright ? 2009 unisonic technologies co., ltd qw-r502-220.b 12 amps, 700 volts n-channel mosfet ? description the utc 12n70 are n-channel enhancement mode power field effect transistors (mosfet) which are produced using utc?s proprietary, planar stripe, dmos technology. these devices are suited for high efficiency switch mode power supply. to minimize on-state resi stance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode the advanced technology has been especially tailored. ? features * r ds(on) = 0.7 ? @v gs = 10 v * ultra low gate charge ( typical 42 nc ) * low reverse transfer capacitance ( c rss = typical 25 pf ) * fast switching capability * avalanche energy specified * improved dv/dt capability, high ruggedness ? symbol 1.gate 3.source 2.drain lead-free: 12n70l halogen-free: 12n70g ? ordering information ordering number pin assignment normal lead free plating halogen free package 1 2 3 packing 12n70-ta3-t 12n70l-ta3-t 12n70g-ta3-t to-220 g d s tube 12n70-tf1-t 12n70l-tf1-t 12n70g-tf1-t to-220f1 g d s tube 12n70-tf3-t 12n70l-tf3-t 12N70G-TF3-T to-220f g d s tube note: pin assignment: g: gate d: drain s: source 12n70l-ta3-t (1)packing type (2)package type (3)lead plating (1) t: tube (2) ta3: to-220, tf1: to220-f1, tf3: to-220f (3) g: halogen free, l: lead free, blank: pb/sn
12n70 power mosfet unisonic technologies co., ltd 2 of 7 www.unisonic.com.tw qw-r502-220.b ? absolute maximum ratings (t c = 25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 700 v gate-source voltage v gss 30 v avalanche current (note 2) i ar 12 a continuous i d 12 a drain current pulsed (note 2) i dm 48 a single pulsed (note 3) e as 790 mj avalanche energy repetitive (note 2) e ar 24 mj peak diode recovery dv/dt (note 4) dv/dt 4.5 v/ns to-220 225 c/w power dissipation to-220f/to-220f1 p d 51 c/w junction temperature t j +150 c operating temperature t opr -55 ~ +150 c storage temperature t stg -55 ~ +150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating : pulse width lim ited by maximum junction temperature 3. l = 10mh, i as = 12a, v dd = 50v, r g = 25 ? , starting t j = 25c 4. i sd 12a, di/dt 200a/s, v dd bv dss starting t j = 25c ? thermal data parameter symbol rating unit junction to ambient ja 62.5 c/w to-220 0.56 c/w junction to case to-220f/to-220f1 jc 2.43 c/w ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs = 0 v, i d = 250 a 700 v drain-source leakage current i dss v ds = 600 v, v gs = 0 v 10 a gate-source leakage current i gss v gs = 30 v, v ds = 0 v 100 na breakdown voltage temperature coefficient bv dss / t j i d = 250 a, referenced to 25c 0.7 v/c on characteristics gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.0 4.0 v static drain-source on-state resistance r ds(on) v gs = 10v, i d = 6.0a 0.55 0.7 ? dynamic characteristics input capacitance c iss 1480 1900 pf output capacitance c oss 200 270 pf reverse transfer capacitance c rss v ds = 25 v, v gs = 0 v, f = 1mhz 25 35 pf switching characteristics turn-on delay time t d(on) 30 70 ns turn-on rise time t r 115 240 ns turn-off delay time t d(off) 95 200 ns turn-off fall time t f v dd = 300v, i d = 12a, r g = 25 ? (note 1, 2) 85 180 ns total gate charge q g 42 54 nc gate-source charge q gs 8.6 nc gate-drain charge q gd v ds = 480v,i d = 12a, v gs = 10 v (note 1, 2) 21 nc
unisonic technologies co., ltd 12n70 power mosfet www.unisonic.com.tw 3 of 7 copyright ? 2009 unisonic technologies co., ltd qw-r502-220.b ? electrical characteristics(cont.) parameter symbol test conditions min typ max unit source- drain diode ratings and characteristics drain-source diode forward voltage v sd v gs = 0 v, i s = 12a 1.4 v maximum continuous drain-source diode forward current i s 12 a maximum pulsed drain-source diode forward current i sm 48 a reverse recovery time t rr 380 ns reverse recovery charge q rr v gs = 0 v, i s = 12a, di f /dt = 100 a/ s (note 1) 3.5 c notes: 1. pulse test : pulse width 300 s, duty cycle 2% 2. essentially independent of operating temperature.
12n70 power mosfet unisonic technologies co., ltd 4 of 7 www.unisonic.com.tw qw-r502-220.b ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) - + v gs = p.w. period fig. 1a peak diode recovery dv/dt test circuit fig. 1b peak diode recovery dv/dt waveforms
12n70 power mosfet unisonic technologies co., ltd 5 of 7 www.unisonic.com.tw qw-r502-220.b ? test circuits and waveforms (cont.) fig. 2a switching test circuit fig. 2b switching waveforms fig. 3a gate charge test circuit fig. 3b gate charge waveform d.u.t. r d 10v v ds l v dd t p v dd t p time bv dss i as i d(t) v ds(t) fig. 4a unclamped inductive switching test circuit fig. 4b unclamped inductive switching waveforms
12n70 power mosfet unisonic technologies co., ltd 6 of 7 www.unisonic.com.tw qw-r502-220.b ? typical characteristics notes: 1.v ds =50v 2.250s pulse test 55c 25c 150c 10 1 10 0 10 -1 24 6810 gate-source voltage, v gs (v) transfer characteristics notes: 250s pulse test t c =25c top: v gs 15v 10v 8.0v 7.0v 6.5v 6.0v bottom: 5.5v 10 1 10 0 10 -1 10 0 10 1 drain-source voltage, v gs (v) on-resign characteristics
12n70 power mosfet unisonic technologies co., ltd 7 of 7 www.unisonic.com.tw qw-r502-220.b ? typical characteristics 10 2 10 1 10 0 10 -1 10 -2 10 1 10 0 10 2 10 3 drain source voltage, v ds (a) drain current, i d (a) 100s 1ms 10ms 100ms dc operation in this area is limited by r ds(on) notes: 1.t c =25c 2.t j =150c 3.single pulse maximum safe operating area v gs =-10v v gs =-4.5v 0 5 10 15 20 25 drain current, -i d (a) 70 65 60 55 50 45 40 35 25 30 20 15 10 on-resistance, r ds(on) (m ? ) on-resistance vs. drain current and gate voltage thermal response, z jc (t) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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